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| LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only BAR DIGIT LED DISPLAY LBD141/2A-XX/S1 DATA SHEET DOC. NO REV. DATE : : QW0905- LBD141/2A-XX/S1 A : 05 - Jul - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD141/2A-XX/S1 Page 1/9 Package Dimensions 43.6 35.0 6.0 HYS HRF UG HYS HRF HRF HRF UG 5.6 4.2 4.0 5.0 4.2 1.5 LBD141/2A-XX/S1 LIGITEK O0.45 TYP 3.00.5 PIN NO.1 2.54*9=22.86 Note : 1.All dimension are in millimeters and (lnch) tolerance is O 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD141/2A-XX/S1 Page 2/9 Internal Circuit Diagram LBD141A-XX/S1 1, 10 HYS HRF UG HYS HRF HRF HRF UG 23456789 LBD142A-XX/S1 1, 10 HYS HRF UG HYS HRF HRF HRF UG 23456789 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD141/2A-XX/S1 Page 3/9 Electrical Connection PIN NO.1 1 2 3 4 5 6 LBD141A-XX/S1 Common Cathode Anode Yellow Anode Red Anode Green Anode Yellow Anode Red PIN NO.1 1 2 3 4 5 6 LBD142A-XX/S1 Common Anode Cathode Yellow Cathode Red Cathode Green Cathode Yellow Cathode Red 7 8 9 10 Anode Red Anode Red Anode Green Common Cathode 7 8 9 10 Cathode Red Cathode Red Cathode Green Common Anode LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD141/2A-XX/S1 Page 4/9 Absolute Maximum Ratings at Ta=25 J Ratings Parameter Symbol HYS Forward Current Per Chip Peak Forward Current PerChip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Reverse Current Per Any Chip Electrostatic Discharge Operating Temperature Storage Temperature IF 30 HRF 30 UG 30 mA UNIT IFP 60 90 120 mA PD Ir ESD Topr Tstg 75 75 10 2000 -40 ~ +85 -40 ~ +85 100 mW g A g A J J Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 J Part Selection And Application Information(Ratings at 25J ) Electrical PART NO common cathode or anode Material Emitted CHIP AlGaInP Yellow Red Green f D (nm) 587 f (nm) Min. 15 20 20 1.7 1.5 1.7 Vf(v) Iv(mcd) Typ. 26 10.5 18 IV-M Typ. Max. Min. 2.1 1.7 2.1 2.6 15.25 2.4 2.6 6.1 10.5 2:1 2:1 2:1 LBD141/2A-XX/S1 AlGaInP AlGaInP Common Anode 630 574 Note : 1.The forward voltage data did not including O 0.1V testing tolerance. 2. The luminous intensity data did not including O 15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD141/2A-XX/S1 Page 5/9 Test Condition For Each Parameter Parameter Forward Voltage Per Chip Luminous Intensity Red Chip Luminous Intensity Yellow or Green Chip Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio Symbol Vf Iv Iv Unit volt mcd mcd nm nm Test Condition If=20mA If=30mA If=40mA If=20mA If=20mA Vr=5V f D f Ir IV-M g A LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD141/2A-XX/S1 Page6/9 Typical Electro-Optical Characteristics Curve HYS CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.0 Forward Current(mA) 100 Relative Intensity Normalize @20mA 1.0 1.5 2.0 2.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000 10 1.0 0.1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Relative Intensity@20mA Normalize @25J 80 100 Forward Voltage@20mA Normalize @25J 1.1 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.0 0.9 0.8 -40 -20 0 20 40 60 Ambient Temperature(J ) Ambient Temperature(J ) Fig.5 Relative Intensity vs. Wavelength 1.0 Relative Intensity@20mA 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD141/2A-XX/S1 Page 7/9 Typical Electro-Optical Characteristics Curve HRF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.5 Forward Current(mA) 100 Relative Intensity Normalize @20mA 2.5 3.0 3.0 2.5 2.0 1.5 1.0 0.5 0 10 1.0 0.1 1.0 1.5 2.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Relative Intensity@20mA Normalize@25J -40 -20 -0 20 40 60 80 100 Forward Voltage@20mA Normalize @25J 2.5 2.0 1.5 1.0 0.5 0 -40 -20 -0 20 40 60 80 100 1.1 1.0 0.9 0.8 Ambient Temperature(J ) Ambient Temperature(J ) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0 550 600 650 700 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD141/2A-XX/S1 Page 8/9 Typical Electro-Optical Characteristics Curve UG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.0 Forward Current(mA) 100 10 Relative Intensity Normalize @20mA 2.5 2.0 1.5 1.0 0.5 0.0 1.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Relative Intensity@20mA Normalize @25J -40 -20 0 20 40 60 80 100 Forward Voltage@20mA Normalize @25J 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 Ambient Temperature(J ) Ambient Temperature(J ) Fig.5 Relative Intensity vs. Wavelength 1.0 Relative Intensity@20mA 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD141/2A-XX/S1 Page 9/9 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 JO 5J 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 JO 5J 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 JO 5J 2.RH=90 %~95% 3.t=240hrs O 2hrs The purpose of this test is the resistance of the device under tropical for hous. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 JO 5J &-40JO (10min) (10min) 2.total 10 cycles 5J The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 JO 5J 2.Dwell time= 10 O 1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 JO 5J 2.Dwell time=5 O 1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 |
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